Calculations of electron mobility of n-InSb at low temperatures

K. Alfaramawi

Physics Department, Teachers College, King Saud University, KSA.

E-mail: kalfaramawi@yahoo.com

ABSTRACT

InSb is one of the narrow band gap III-V semiconductors. This gives a good chance to study the transport behavior at different temperature regimes, particularly at low temperature range starting from room temperature. In this article calculations of the electron mobility have been performed at large temperature range from room temperature down to 10 K by using relaxation time approximation method. Many scattering sources have been considered. Neutral impurity scattering, ionized impurity scattering and lattice scattering were investigated. A good agreement between the calculations and experimental results were noticed.

Keywords: narrow band gap, mobility, impurities, lattice scattering.

Corresponding author  contact: Physics Department, Teachers College, King Saud University, P.O. Box 4341, Riyadh 11491, Tel: 01491063, Fax: 4915684.