Deposition and Electrical Properties of II-VI Semiconductor Thin Films by Close Spaced Sublimation Technique

       Nazar Abbas Shah^* Waqar.A. Adil

* Department of Physics, COMSATS Institute of Information Technology, Islamabad 45320 Pakistan

*Crossponding Author E-mail: nabbasqureshi@yahoo.com  Cell: +9203215105363, Fax: +92-514442805 

Abstract

Cadmium telluride/ Cadmium Sulfide polycrystalline films were grown on corning glass substrate by Close Spaced Sublimation (CSS) technique. The structural investigations performed by means of X-ray diffraction (XRD) technique, scanning electron microscope (SEM) and energy dispersive X-ray spectroscopy (EDX) showed that the deposited films exhibit a polycrystalline structure with <111> as preferred orientation The structural, optical and electrical properties of these films were analyzed. For the doped films, the electrical resistivity dropped several orders of magnitude. The deposited films also showed that the value of resistivity decreased with increasing temperature manifesting the semi conducting behavior of the films. Hall measurements on these thin films are discussed in detail.